a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25c symbol test conditions minimum typical maximum units bv cer i c = 25 ma r be = 10 ? 65 v bv cbo i c = 10 ma 65 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 50 v 10 ma h fe v ce = 5.0 v i c = 100 ma 5.0 --- p out g p v ce = 50 v p in = 13.5 w f = 1025 to 1150 mhz pulse width = 10 s duty cycle = 1.0% 90 8.4 w db npn silicon rf power transistor asi SD1536-08 description: the asi SD1536-08 is a common base device designed for dme iff, and tacan pulse applications. features include: ? gold metallization ? internal impedance matching ? broad band performance maximum ratings i c 10 a v ces 65 v p diss 292 w @ t c = 25 c t j -55 c to +200 c t stg -55 c to +150 c jc 0.60 c/w package style .250 sq 2l fl 1 = collector 2 = emitter 3 = base 1 2 3
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